SIE860DF-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SIE860DF-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 30V POLARPAK
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 21.7A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 105nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4500pF @ 15V | |
| Power - Max | 104W | |
| Mounting Type | Surface Mount | |
| Package / Case | 10-PolarPAK® (M) |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 2.1 mOhm @ 21.7A, 10V for MOSFET efficiency.
