SIRA18DP-T1-GE3

SIRA18DP-T1-GE3
Attribute
Description
Manufacturer Part Number
SIRA18DP-T1-GE3
Manufacturer
Description
MOSFET N-CHAN 30V D-S SO-8
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 15.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 21.5nC @ 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 15V
Power - Max 14.7W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 7.5 mOhm @ 10A, 10V for MOSFET efficiency.

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