Attribute
Description
Manufacturer Part Number
SISS23DN-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V PPAK 1212-8S
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 50A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 20A, 4.5V | |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 8840pF @ 15V | |
| Power - Max | 4.8W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 4.5 mOhm @ 20A, 4.5V for MOSFET efficiency.
