SI7454DDP-T1-GE3

SI7454DDP-T1-GE3
Attribute
Description
Manufacturer Part Number
SI7454DDP-T1-GE3
Manufacturer
Description
MOSFET N-CHAN 100V D-S PPAK SO-8
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.9A (Ta)
Rds On (Max) @ Id, Vgs 33 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 19.5nC @ 10V
Input Capacitance (Ciss) @ Vds 550pF @ 50V
Power - Max 4.1W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 33 mOhm @ 10A, 10V for MOSFET efficiency.

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