SIR876DP-T1-GE3

SIR876DP-T1-GE3
Attribute
Description
Manufacturer Part Number
SIR876DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 100V 8-SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Rds On (Max) @ Id, Vgs 10.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) @ Vds 1640pF @ 50V
Power - Max 62.5W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 10.8 mOhm @ 20A, 10V for MOSFET efficiency.

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