SIE854DF-T1-GE3

SIE854DF-T1-GE3
Attribute
Description
Manufacturer Part Number
SIE854DF-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 100V POLARPAK
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Rds On (Max) @ Id, Vgs 14.2 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250µA
Gate Charge (Qg) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) @ Vds 3100pF @ 50V
Power - Max 125W
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (L)

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 14.2 mOhm @ 13.2A, 10V for MOSFET efficiency.

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