SIA950DJ-T1-GE3

SIA950DJ-T1-GE3
Attribute
Description
Manufacturer Part Number
SIA950DJ-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 190V SC-70-6
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 190V
Current - Continuous Drain (Id) @ 25°C 950mA
Rds On (Max) @ Id, Vgs 3.8 Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 4.5nC @ 10V
Input Capacitance (Ciss) @ Vds 90pF @ 100V
Power - Max 7W
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual

Description

Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 3.8 Ohm @ 360mA, 4.5V for MOSFET efficiency.

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