SI7958DP-T1-GE3

SI7958DP-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI7958DP-T1-GE3
Manufacturer
Description
MOSFET DL N-CH 40V PPAK 8-SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 7.2A
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual

Description

Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 16.5 mOhm @ 11.3A, 10V for MOSFET efficiency.

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