SI7911DN-T1-GE3

SI7911DN-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI7911DN-T1-GE3
Manufacturer
Description
MOSFET P-CH D-S 20V 1212-8 PPAK
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.2A
Rds On (Max) @ Id, Vgs 51 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual

Description

Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 51 mOhm @ 5.7A, 4.5V for MOSFET efficiency.

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