Attribute
Description
Manufacturer Part Number
SI5906DU-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 30V 6A PPAK FET
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 6A | |
| Rds On (Max) @ Id, Vgs | 31 mOhm @ 4.8A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 8.6nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 300pF @ 15V | |
| Power - Max | 10.4W | |
| Mounting Type | Surface Mount | |
| Package / Case | - |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 31 mOhm @ 4.8A, 10V for MOSFET efficiency.
