Attribute
Description
Manufacturer Part Number
SIZ710DT-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 20V POWERPAIR
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 16A, 30A | |
| Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 19A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 820pF @ 10V | |
| Power - Max | 3.9W, 4.6W | |
| Mounting Type | Surface Mount | |
| Package / Case | - |
Description
Measures resistance at forward current 2 N-Channel (Dual) Asymmetrical for LED or diode evaluation. Peak Rds(on) at Id 6.8 mOhm @ 19A, 10V for MOSFET efficiency.
