SI8487DB-T1-E1

SI8487DB-T1-E1
Attribute
Description
Manufacturer Part Number
SI8487DB-T1-E1
Manufacturer
Description
MOSFET P-CH 30V (D-S) MICROFOOT
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 31 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) @ Vds 2240pF @ 15V
Power - Max -
Mounting Type Surface Mount
Package / Case 4-UFBGA

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 31 mOhm @ 2A, 10V for MOSFET efficiency.

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