SI5402BDC-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI5402BDC-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 30V 1206-8
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) | |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.3W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 35 mOhm @ 4.9A, 10V for MOSFET efficiency.
