SI5402BDC-T1-E3

SI5402BDC-T1-E3
Attribute
Description
Manufacturer Part Number
SI5402BDC-T1-E3
Manufacturer
Description
MOSFET, N CH, 30V, 4.9A,...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Rds On (Max) @ Id, Vgs 35 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 35 mOhm @ 4.9A, 10V for MOSFET efficiency.

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