SI7485DP-T1-GE3

SI7485DP-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI7485DP-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 12.5A PPAK 8SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Rds On (Max) @ Id, Vgs 7.3 mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 1mA
Gate Charge (Qg) @ Vgs 150nC @ 5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 7.3 mOhm @ 20A, 4.5V for MOSFET efficiency.

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