IXTP1R6N100D2
Data Sheet
Attribute
Description
Manufacturer Part Number
IXTP1R6N100D2
Manufacturer
Description
MOSFET N-CH 1000V 1.6A TO220AB
Note :
GST will not be applied to orders shipping outside of India
Stock: 80
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 171.75 | ₹ 171.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 800mA, 0V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | 27nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 645pF @ 25V | |
| Power - Max | 100W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 10 Ohm @ 800mA, 0V for MOSFET efficiency.
