IXTP1R4N100P
Data Sheet
Attribute
Description
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Stock: 70
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 174.00 | ₹ 174.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) | |
| Rds On (Max) @ Id, Vgs | 11 Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA | |
| Gate Charge (Qg) @ Vgs | 17.8nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 450pF @ 25V | |
| Power - Max | 63W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 11 Ohm @ 500mA, 10V for MOSFET efficiency.
