IXTP05N100P

IXTP05N100P

Data Sheet

Attribute
Description
Manufacturer Part Number
IXTP05N100P
Manufacturer
Description
MOSFET N-CH 1000V 500MA TO-263
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Rds On (Max) @ Id, Vgs 30 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) @ Vgs 8.1nC @ 10V
Input Capacitance (Ciss) @ Vds 196pF @ 25V
Power - Max 50W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 30 Ohm @ 250mA, 10V for MOSFET efficiency.

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