IXTP8N50P
Data Sheet
Attribute
Description
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Stock: 99
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 166.50 | ₹ 166.50 |
Stock: 91
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 240.44 | ₹ 240.44 |
| 3 | ₹ 207.31 | ₹ 621.93 |
| 10 | ₹ 166.60 | ₹ 1,666.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1050pF @ 25V | |
| Power - Max | 150W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 800 mOhm @ 4A, 10V for MOSFET efficiency.
