IXTU1R4N60P

IXTU1R4N60P

Data Sheet

Attribute
Description
Manufacturer Part Number
IXTU1R4N60P
Manufacturer
Description
MOSFET N-CH 600V 1.4A TO251
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Rds On (Max) @ Id, Vgs 9 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA
Gate Charge (Qg) @ Vgs 5.2nC @ 10V
Input Capacitance (Ciss) @ Vds 140pF @ 25V
Power - Max 50W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 9 Ohm @ 700mA, 10V for MOSFET efficiency.

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