IXTP2N80

IXTP2N80

Data Sheet

Attribute
Description
Manufacturer Part Number
IXTP2N80
Manufacturer
Description
MOSFET N-CH 800V 2A TO-220
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Rds On (Max) @ Id, Vgs 6.2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max 54W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 6.2 Ohm @ 500mA, 10V for MOSFET efficiency.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.