2N5195

2N5195
Attribute
Description
Manufacturer Part Number
2N5195
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 4A, 80V
Note : GST will not be applied to orders shipping outside of India

Stock:
10

Distributor: 6

Traceability

Lead Time: Not specified

Quantity Unit Price Ext. Price
10 ₹ 145.78 ₹ 1,457.80
25 ₹ 139.15 ₹ 3,478.75
75 ₹ 123.06 ₹ 9,229.50
200 ₹ 103.18 ₹ 20,636.00
500 ₹ 88.51 ₹ 44,255.00

Product Attributes

Type Description
Category
Transistor Type PNP
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 1A, 4A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A, 2V
Power - Max 40W
Frequency - Transition 2MHz
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3

Description

Measures resistance at forward current 1mA for LED or diode evaluation. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.2V @ 1A, 4A. Peak Vce(on) at Vge 4A for transistor parameters.

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