Attribute
Description
Manufacturer Part Number
2N6036
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 10
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 170.39 | ₹ 1,703.90 |
| 30 | ₹ 163.76 | ₹ 4,912.80 |
| 150 | ₹ 156.19 | ₹ 23,428.50 |
| 300 | ₹ 141.99 | ₹ 42,597.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | PNP - Darlington | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Current - Collector Cutoff (Max) | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V | |
| Power - Max | 40W | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 100µA for LED or diode evaluation. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 3V @ 40mA, 4A. Peak Vce(on) at Vge 4A for transistor parameters.
