Attribute
Description
Manufacturer Part Number
2N6039
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 40
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10 | ₹ 128.74 | ₹ 1,287.40 |
| 25 | ₹ 124.00 | ₹ 3,100.00 |
| 75 | ₹ 111.70 | ₹ 8,377.50 |
| 200 | ₹ 93.71 | ₹ 18,742.00 |
| 500 | ₹ 79.51 | ₹ 39,755.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Current - Collector Cutoff (Max) | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V | |
| Power - Max | 40W | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 100µA for LED or diode evaluation. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 3V @ 40mA, 4A. Peak Vce(on) at Vge 4A for transistor parameters.
