Attribute
Description
Manufacturer Part Number
2N5192
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
4A,
80V
Manufacturer Lead Time
51 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 1A, 4A | |
| Current - Collector Cutoff (Max) | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V | |
| Power - Max | 40W | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1.4V @ 1A, 4A. Peak Vce(on) at Vge 4A for transistor parameters.
