Attribute
Description
Manufacturer Part Number
MPSW06G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
500mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 100
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 10.03 | ₹ 1,003.00 |
| 4000 | ₹ 9.32 | ₹ 37,280.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 250mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 250mA, 1V | |
| Power - Max | 1W | |
| Frequency - Transition | 50MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Long Body |
Description
Measures resistance at forward current 500nA for LED or diode evaluation. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 400mV @ 10mA, 250mA. Peak Vce(on) at Vge 500mA for transistor parameters.
