MJE170G

MJE170G
Attribute
Description
Manufacturer Part Number
MJE170G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 3A, 40V
Note : GST will not be applied to orders shipping outside of India

Stock:
2189

Distributor: 3

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 21.20 ₹ 21.20
10 ₹ 21.20 ₹ 212.00
100 ₹ 19.50 ₹ 1,950.00
1000 ₹ 17.99 ₹ 17,990.00
2500 ₹ 16.66 ₹ 41,650.00
10000 ₹ 15.62 ₹ 1,56,200.00

Stock:
1248

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 41.25 ₹ 41.25

Product Attributes

Type Description
Category
Transistor Type PNP
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V
Power - Max 1.5W
Frequency - Transition 50MHz
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3

Description

Features a DC current gain hFE at Ic evaluated at 1.7V @ 600mA, 3A. Peak Vce(on) at Vge 3A for transistor parameters.

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