MJE271G

MJE271G
Attribute
Description
Manufacturer Part Number
MJE271G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
2

Distributor: 3

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 15.43 ₹ 15.43
10 ₹ 15.43 ₹ 154.30
100 ₹ 15.43 ₹ 1,543.00
500 ₹ 15.43 ₹ 7,715.00
1000 ₹ 15.43 ₹ 15,430.00
2500 ₹ 15.43 ₹ 38,575.00

Stock:
15

Distributor: 6

Traceability

Lead Time: Not specified


Quantity Unit Price Ext. Price
15 ₹ 77.62 ₹ 1,164.30
500 ₹ 69.58 ₹ 34,790.00

Product Attributes

Type Description
Category
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V
Power - Max 1.5W
Frequency - Transition 6MHz
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3

Description

Measures resistance at forward current 1mA for LED or diode evaluation. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 3V @ 1.2mA, 120mA. Peak Vce(on) at Vge 2A for transistor parameters.

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