2N4919G

2N4919G
Attribute
Description
Manufacturer Part Number
2N4919G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 1A, 60V
Note : GST will not be applied to orders shipping outside of India

Stock:
40

Distributor: 6

Traceability

Lead Time: Not specified

Quantity Unit Price Ext. Price
40 ₹ 26.50 ₹ 1,060.00
1250 ₹ 24.61 ₹ 30,762.50

Stock:
2020

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 43.50 ₹ 43.50

Stock:
1

Distributor: 3

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 57.36 ₹ 57.36
10 ₹ 44.96 ₹ 449.60
100 ₹ 28.97 ₹ 2,897.00
1000 ₹ 23.19 ₹ 23,190.00
2000 ₹ 19.59 ₹ 39,180.00
5000 ₹ 18.84 ₹ 94,200.00

Product Attributes

Type Description
Category
Transistor Type PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA, 1V
Power - Max 30W
Frequency - Transition 3MHz
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3

Description

Measures resistance at forward current 500µA for LED or diode evaluation. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 600mV @ 100mA, 1A. Peak Vce(on) at Vge 1A for transistor parameters.

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