SQ2360EES-T1-GE3

SQ2360EES-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SQ2360EES-T1-GE3
Manufacturer
Description
MOSFET N-CH 60V 4.4A TO236
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Rds On (Max) @ Id, Vgs 85 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) @ Vds 370pF @ 25V
Power - Max 3W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 85 mOhm @ 6A, 10V for MOSFET efficiency.

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