Attribute
Description
Manufacturer Part Number
SI2309CDS-T1-GE3
Manufacturer
Description
MOSFET,
P CH,
-60V,
-1.6A,
SOT-23-3; Tra; MOSFET,
P CH,...
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta), 1.6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 345 mOhm @ 1.25A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 4.1nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 210pF @ 30V | |
| Power - Max | 1.7W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 345 mOhm @ 1.25A, 10V for MOSFET efficiency.
