SQ2310ES-T1-GE3

SQ2310ES-T1-GE3
Attribute
Description
Manufacturer Part Number
SQ2310ES-T1-GE3
Manufacturer
Description
MOSFET N-CH 20V 6A SOT23
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 30 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 485pF @ 10V
Power - Max 2W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 30 mOhm @ 5A, 4.5V for MOSFET efficiency.

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