SI2351DS-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI2351DS-T1-GE3
Manufacturer
Description
MOSFET,
P CH,
20V,
2.8A,...
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 115 mOhm @ 2.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 5.1nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 250pF @ 10V | |
| Power - Max | 2.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 115 mOhm @ 2.4A, 4.5V for MOSFET efficiency.
