Attribute
Description
Manufacturer Part Number
SIB410DK-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 30V 5.9A/9A SO8
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta), 9A (Tc) | |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 3.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 8.6nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 560pF @ 15V | |
| Power - Max | 2.5W | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® SC-75-6L |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 42 mOhm @ 3.8A, 4.5V for MOSFET efficiency.
