SIS435DNT-T1-GE3

SIS435DNT-T1-GE3
Attribute
Description
Manufacturer Part Number
SIS435DNT-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 22A 1212-8
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 5.4 mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 180nC @ 8V
Input Capacitance (Ciss) @ Vds 5700pF @ 10V
Power - Max 3.7W
Mounting Type Surface Mount
Package / Case PowerPAK 1212-8

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 5.4 mOhm @ 13A, 4.5V for MOSFET efficiency.

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