SI8402DB-T1-E1
Data Sheet
Attribute
Description
Manufacturer Part Number
SI8402DB-T1-E1
Manufacturer
Description
MOSFET N-CH 20V 5.3A 2X2 4-MFP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) | |
| Rds On (Max) @ Id, Vgs | 37 mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 26nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.47W | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-XFBGA, CSPBGA |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 37 mOhm @ 1A, 4.5V for MOSFET efficiency.
