SI7858ADP-T1-E3

SI7858ADP-T1-E3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI7858ADP-T1-E3
Manufacturer
Description
MOSFET N-CH 12V 20A PPAK 8SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 29A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 80nC @ 4.5V
Input Capacitance (Ciss) @ Vds 5700pF @ 6V
Power - Max 1.9W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 2.6 mOhm @ 29A, 4.5V for MOSFET efficiency.

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