SI6463BDQ-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI6463BDQ-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 6.2A 8-TSSOP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) | |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 7.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 800mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 60nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.05W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 15 mOhm @ 7.4A, 4.5V for MOSFET efficiency.
