SI4825DDY-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI4825DDY-T1-GE3
Manufacturer
Description
MOSFET,
P CH,
DIODE,
30V,
14.9A,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Ta), 14.9A (Tc) | |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 86nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2550pF @ 15V | |
| Power - Max | 5W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 12.5 mOhm @ 10A, 10V for MOSFET efficiency.
