SI6423DQ-T1-E3

SI6423DQ-T1-E3
Attribute
Description
Manufacturer Part Number
SI6423DQ-T1-E3
Manufacturer
Description
MOSFET P-CH 12V 8.2A 8-TSSOP
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta)
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 400µA
Gate Charge (Qg) @ Vgs 110nC @ 5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.05W
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 8.5 mOhm @ 9.5A, 4.5V for MOSFET efficiency.

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