SI4434DY-T1-GE3

SI4434DY-T1-GE3
Attribute
Description
Manufacturer Part Number
SI4434DY-T1-GE3
Manufacturer
Description
MOSFET N-CH D-S 250V 8-SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.1A (Ta)
Rds On (Max) @ Id, Vgs 155 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.56W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 155 mOhm @ 3A, 10V for MOSFET efficiency.

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