SI3495DV-T1-E3

SI3495DV-T1-E3
Attribute
Description
Manufacturer Part Number
SI3495DV-T1-E3
Manufacturer
Description
MOSFET P-CH 20V 5.3A 6-TSOP
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Rds On (Max) @ Id, Vgs 24 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 750mV @ 250µA
Gate Charge (Qg) @ Vgs 38nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 24 mOhm @ 7A, 4.5V for MOSFET efficiency.

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