SI3433BDV-T1-E3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI3433BDV-T1-E3
Manufacturer
Description
MOSFET P-CH 20V 4.3A 6-TSOP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) | |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 5.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 850mV @ 250µA | |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSOP (0.065", 1.65mm Width) |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 42 mOhm @ 5.6A, 4.5V for MOSFET efficiency.
