Attribute
Description
Manufacturer Part Number
SI1958DH-T1-E3
Manufacturer
Description
MOSFET,
DUAL,
N,
SC-70; Transistor Polarity:N Channel; Conti...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.3A | |
| Rds On (Max) @ Id, Vgs | 205 mOhm @ 1.3A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 3.8nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 105pF @ 10V | |
| Power - Max | 740mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 205 mOhm @ 1.3A, 4.5V for MOSFET efficiency.
