SI1062X-T1-GE3

SI1062X-T1-GE3
Attribute
Description
Manufacturer Part Number
SI1062X-T1-GE3
Manufacturer
Description
MOSFET N-CHAN 20V D-S SC-89
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
Rds On (Max) @ Id, Vgs 420 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 2.7nC @ 8V
Input Capacitance (Ciss) @ Vds 43pF @ 10V
Power - Max 220mW
Mounting Type Surface Mount
Package / Case SC-89, SOT-490

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 420 mOhm @ 500mA, 4.5V for MOSFET efficiency.

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