Attribute
Description
Manufacturer Part Number
IRLD110PBF
Manufacturer
Description
MOSFET N-CH 100V 1A 4-DIP
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 6.1nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 250pF @ 25V | |
| Power - Max | 1.3W | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.300", 7.62mm) |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 540 mOhm @ 600mA, 5V for MOSFET efficiency.
