Attribute
Description
Manufacturer Part Number
IRFD210PBF
Manufacturer
Description
MOSFET N-CH 200V 600MA 4-DIP
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 360mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 8.2nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 140pF @ 25V | |
| Power - Max | 1W | |
| Mounting Type | Through Hole | |
| Package / Case | 4-DIP (0.300", 7.62mm) |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 1.5 Ohm @ 360mA, 10V for MOSFET efficiency.
