IRFB9N65APBF

IRFB9N65APBF
Attribute
Description
Manufacturer Part Number
IRFB9N65APBF
Manufacturer
Description
MOSFET N-CH 650V 8.5A TO-220AB
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Rds On (Max) @ Id, Vgs 930 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) @ Vds 1417pF @ 25V
Power - Max 167W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 930 mOhm @ 5.1A, 10V for MOSFET efficiency.

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