IRF8010PBF
Data Sheet
Attribute
Description
Manufacturer Part Number
IRF8010PBF
Manufacturer
Description
Transistor: N-MOSFET; unipolar; HEXFET; 100V; 80A;
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 45A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3830pF @ 25V | |
| Power - Max | 260W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 15 mOhm @ 45A, 10V for MOSFET efficiency.
