IRL8113PBF

IRL8113PBF

Data Sheet

Attribute
Description
Manufacturer Part Number
IRL8113PBF
Description
Transistor: N-MOSFET; unipolar; HEXFET; 30V; 105A;
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 105A (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) @ Vgs 35nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2840pF @ 15V
Power - Max 110W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 6 mOhm @ 21A, 10V for MOSFET efficiency.

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